High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Type:
Journal
Info:
Materials 2019, 12, 1056
Date:
2019-03-27
DOI:
http://dx.doi.org/10.3390/ma12071056

Author Information

Name Institution
Ava KhosraviUniversity of Texas at Dallas
Rafik AddouUniversity of Texas at Dallas
Massimo CatalanoUniversity of Texas at Dallas
Jiyoung KimUniversity of Texas at Dallas
Robert M. WallaceUniversity of Texas at Dallas

Films

Thermal Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Omicron EA125

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Dimension 3100

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Substrates

ReS2

Notes

1283