Publication Information

Title: High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Type: Journal

Info: Materials 2019, 12, 1056

Date: 2019-03-27

DOI: http://dx.doi.org/10.3390/ma12071056

Author Information

Name

Institution

University of Texas at Dallas

University of Texas at Dallas

University of Texas at Dallas

University of Texas at Dallas

University of Texas at Dallas

Films

Thermal Al2O3 using Picosun R200

Deposition Temperature = 200C

75-24-1

7732-18-5

Plasma Al2O3 using Picosun R200

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Omicron EA125

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Dimension 3100

Raman Spectra

Raman Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

HAADF, High-Angle Annular Dark Field

JEOL JEM ARM 200

Substrates

ReS2

Keywords

Plasma vs Thermal Comparison

Notes

1283



Shortcuts



© 2014-2019 plasma-ald.com