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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
Type:
Journal
Info:
Lab Chip, 2015,15, 2887-2895
Date:
2015-05-25
Author Information
| Name | Institution |
|---|---|
| Daniel Czurratis | Robert Bosch GmbH |
| Yvonne Beyl | Robert Bosch GmbH |
| Alexander Grimm | Robert Bosch GmbH |
| Thomas Brettschneider | Robert Bosch GmbH |
| Sven Zinober | Robert Bosch GmbH |
| Franz Lärmer | Robert Bosch GmbH |
| Roland Zengerle | University of Freiburg |
Films
Film/Plasma Properties
Substrates
| Polycarbonate |
Keywords
Notes
| 501 |