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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Mengyuan Hua | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
Notes
| 812 |