Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Mengyuan Hua | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
| GaN |
Notes
| 812 |