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From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
Carbon content control of silicon oxycarbide film with methane containing plasma
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Publication Information
Title:
Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Mengyuan Hua | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
Notes
| 812 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |