Publication Information

Title:
Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10

Author Information

Name Institution
Kevin J. ChenHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Mengyuan HuaHong Kong University of Science and Technology

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

GaN

Keywords

Notes

812