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272 Precursors and Plasma Gases
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Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
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Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Cheng Liu | Hong Kong University of Science and Technology |
| Mengyuan Hua | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
Notes
| 812 |