Toward reliable MIS- and MOS-gate structures for GaN lateral power devices

Type:
Journal
Info:
physica status solidi (a), Volume 213, Issue 4, pages 861–867, April 2016
Date:
2016-01-10
DOI:
http://dx.doi.org/10.1002/pssa.201532873

Author Information

Name Institution
Kevin J. ChenHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Mengyuan HuaHong Kong University of Science and Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Keywords

Notes

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