Publication Information

Title: Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

Type: Journal

Info: IEEE Transactions on Nanotechnology, (Volume:14, Issue:5)

Date: 2015-07-14

DOI: http://dx.doi.org/10.1109/TNANO.2015.2456182

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GeO2

Keywords

Notes

498



Shortcuts



© 2014-2018 plasma-ald.com