Publication Information

Title:
Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
Type:
Journal
Info:
IEEE Transactions on Nanotechnology, (Volume:14, Issue:5)
Date:
2015-07-14

Author Information

Name Institution
I-Hsieh WongNational Taiwan University
Yen-Ting ChenNational Taiwan University
Shih-Hsien HuangNational Taiwan University
Wen-Hsien TuNational Taiwan University
Yu-Sheng ChenNational Taiwan University
Chee Wee LiuNational Taiwan University

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

GeO2

Keywords

Notes

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