Publication Information

Title: Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 55-58

Date: 2008-08-26

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=9C617B57-48D6-4C46-8EA1-BDAFB1F59FD6&globalmenu=3&localmenu=10

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Al2O3 using Custom ECR

Deposition Temperature Range = 25-400C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

JEOL 3010

Thickness

Ellipsometry

Rudolf AutoEL II

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Seiko SPA-400

Diffusion Barrier Properties

Custom

Custom

Substrates

Silicon

PVK, Poly N-vinylcarbazole

Keywords

Diffusion Barrier

Low-Temperature

Notes

740



Shortcuts



© 2014-2019 plasma-ald.com