Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 55-58
Date:
2008-08-26
DOI:
http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=9C617B57-48D6-4C46-8EA1-BDAFB1F59FD6&globalmenu=3&localmenu=10

Author Information

Name Institution
Woong-Sun KimHanyang University
Dae-Young MoonHanyang University
Byoung-Woo KangHanyang University
Jong-Wan ParkHanyang University

Films

Plasma Al2O3

Hardware used: Custom ECR
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Diffusion Barrier Properties
Analysis: Custom
Diagnostic: Custom

Substrates

Silicon
PVK, Poly N-vinylcarbazole

Notes

740