Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 55-58
Date:
2008-08-26

Author Information

Name Institution
Woong-Sun KimHanyang University
Dae-Young MoonHanyang University
Byoung-Woo KangHanyang University
Jong-Wan ParkHanyang University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Diffusion Barrier Properties
Analysis: Custom

Substrates

Silicon
PVK, Poly N-vinylcarbazole

Notes

740