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The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition

Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, 2012
Date:
2012-07-01
DOI:
http://dx.doi.org/10.1166/jnn.2012.6265

Author Information

Name Institution
Jaesang LeeHanyang University
Hyungchul KimHynix Semiconductor
Taeyong ParkHanyang University
Youngbin KoHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Jaehun RyuHynix Semiconductor
Hyeongtag JeonHanyang University

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)
SiO2

Notes

670