Publication Information

Title:
The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, 2012
Date:
2012-07-01

Author Information

Name Institution
Jaesang LeeHanyang University
Hyungchul KimHynix Semiconductor
Taeyong ParkHanyang University
Youngbin KoHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Jaehun RyuHynix Semiconductor
Hyeongtag JeonHanyang University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
SiO2

Keywords

Low-Temperature

Notes

670