Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

Type:
Journal
Info:
Plasma Science and Technology, Vol.15, No.1, 2013
Date:
2012-01-04
DOI:
http://dx.doi.org/10.1088/1009-0630/15/1/09

Author Information

Name Institution
Yuqing XiongLanzhou Institute of Physics
Lijun SangBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication
Lizhen YangBeijing Institute of Graphic Communication
Zhengduo WangBeijing Institute of Graphic Communication
Zhongwei LiuBeijing Institute of Graphic Communication

Films

Plasma Al2O3

Hardware used: Custom ECR
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Dektak

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG MKII

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Substrates

Silicon

Notes

640