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Publication Information

Title: Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor

Type: Conference Proceedings

Info: IMID 2015 Digest

Date: 2015-08-19

DOI: http://www.imid.or.kr/2015/files/02_1074.PDF

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7732-18-5

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Plasma vs Thermal Comparison

Notes

460


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