In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. B 38(1) Jan/Feb 2020
Date:
2019-12-17
DOI:
http://dx.doi.org/10.1116/1.5122797

Author Information

Name Institution
Franziska NaumannSentech Instruments GmbH
Johanna ReckSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH
Bernd GruskaSentech Instruments GmbH
Adrian BlümichAEMtec GmbH
Ali MahmoodinezhadBrandenburg University of Technology
Christoph JanowitzBrandenburg University of Technology
Karsten HenkelBrandenburg University of Technology
Jan Ingo FlegeBrandenburg University of Technology

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-250C

Thermal Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Optical Absorption
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Chemical Composition, Impurities
Analysis: Ellipsometry
Diagnostic: SENTECH Sendira

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Omicron EA125

Substrates

Al2O3

Notes

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