Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells

Type:
Conference Proceedings
Info:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Date:
2016-06-05
DOI:
http://dx.doi.org/10.1109/PVSC.2016.7750196

Author Information

Name Institution
K. C. ShinKorea Institute of Energy Research
J. I. LeeKorea Institute of Energy Research
Min Gu KangKorea Institute of Energy Research
Hee-eun SongKorea Institute of Energy Research

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

928