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Publication Information

Title: Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing

Type: Journal

Info: ECS Transactions, 67 (1) 205-210 (2015)

Date: 2015-06-14

DOI: http://dx.doi.org/10.1149/06701.0205ecst

Author Information

Name

Institution

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Substrates

Keywords

Notes

500


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