Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
Type:
Journal
Info:
ECS Transactions, 67 (1) 205-210 (2015)
Date:
2015-06-14
Author Information
| Name | Institution |
|---|---|
| Koji Yoshitsugu | Nara Institute of Science and Technology |
| Masahiro Horita | Nara Institute of Science and Technology |
| Yasuaki Ishikawa | Nara Institute of Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
Notes
| 500 |