Publication Information

Title:
Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
Type:
Journal
Info:
ECS Transactions, 67 (1) 205-210 (2015)
Date:
2015-06-14

Author Information

Name Institution
Koji YoshitsuguNara Institute of Science and Technology
Masahiro HoritaNara Institute of Science and Technology
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Keywords

Notes

500