Publication Information

Title:
In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
Type:
Journal
Info:
Applied Physics Letters 107, 081608 (2015)
Date:
2015-08-19

Author Information

Name Institution
Xiaoye QinUniversity of Texas at Dallas
Robert M. WallaceUniversity of Texas at Dallas

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: LEIS, Low Energy Ion Scattering

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

AlGaN

Keywords

Notes

391