Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

Type:
Journal
Info:
Beilstein J. Nanotechnol. 2013, 4, 732--742
Date:
2013-10-23
DOI:
http://dx.doi.org/10.3762/bjnano.4.83

Author Information

Name Institution
Jorg HaeberleBrandenburg University of Technology
Karsten HenkelBrandenburg University of Technology
Hassan GargouriSentech Instruments GmbH
Franziska NaumannSentech Instruments GmbH
Bernd GruskaSentech Instruments GmbH
Michael ArensSentech Instruments GmbH
Massimo TallaridaBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology

Films

Thermal Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Specs

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

Si with native oxide

Notes

566