About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system

Type:
Conference Proceedings
Info:
2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC)
Date:
2015-04-14
DOI:
http://dx.doi.org/10.1109/ICEP-IAAC.2015.7111092

Author Information

Name Institution
In Joong KimYonsei University
Yong Hyeon ShinYonsei University
Ilgu YunYonsei University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

508