Charge effects of ultrafine FET with nanodot type floating gate

Type:
Conference Proceedings
Info:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Date:
2016-07-06
DOI:
http://dx.doi.org/10.1109/AM-FPD.2016.7543607

Author Information

Name Institution
T. BanRyukoku University
S. MigitaNational Institute of Advanced Industrial Science and Technology
Yukiharu UraokaNara Institute of Science and Technology
S. I. YamamotoRyukoku University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

Notes

921