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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Charge effects of ultrafine FET with nanodot type floating gate
Type:
Conference Proceedings
Info:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Date:
2016-07-06
Author Information
| Name | Institution |
|---|---|
| T. Ban | Ryukoku University |
| S. Migita | National Institute of Advanced Industrial Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
| S. I. Yamamoto | Ryukoku University |
Films
Film/Plasma Properties
Substrates
Notes
| 921 |