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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Charge effects of ultrafine FET with nanodot type floating gate
Type:
Conference Proceedings
Info:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Date:
2016-07-06
Author Information
| Name | Institution |
|---|---|
| T. Ban | Ryukoku University |
| S. Migita | National Institute of Advanced Industrial Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
| S. I. Yamamoto | Ryukoku University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 921 |