Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38(5) 2020 052407
Date:
2020-08-19
DOI:
http://dx.doi.org/10.1116/6.0000388

Author Information

Name Institution
Masaki HirayamaTohoku University
Shigetoshi SugawaTohoku University

Films

Plasma Al2O3

Hardware used: Custom Direct Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: Shimadzu ESCA-3400

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Themis

Characteristic: Ion Energy
Analysis: Langmuir Probe
Diagnostic: -

Characteristic: Ion Flux
Analysis: Planar Probe
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

1711