Publication Information

Title: Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

Type: Journal

Info: https://arxiv.org/abs/1605.00477

Date: 2016-05-01

DOI: https://arxiv.org/abs/1605.00477

Author Information

Name

Institution

Université Paris Diderot, CNRS UMR 7162

CNRS UPR 20

Ecole Polytechnique, CNRS UMR 7643

UMR CNRS 8520

Ioffe Institute

Ioffe Institute

CNRS UPR 20

CNRS UPR 20

CNRS UPR 20

Thales Research and Technology

III-V Lab

Université Paris Diderot, CNRS UMR 7162

Université Paris Diderot, CNRS UMR 7162

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Optical Properties

Optical Transmission

-

Substrates

GaAs

Keywords

Notes

786



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