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Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

Type:
Journal
Info:
https://arxiv.org/abs/1605.00477
Date:
2016-05-01
DOI:
https://arxiv.org/abs/1605.00477

Author Information

Name Institution
Biswarup GuhaUniversité Paris Diderot, CNRS UMR 7162
Felix MarsaultCNRS UPR 20
Fabian CadizEcole Polytechnique, CNRS UMR 7643
Laurence MorgenrothUMR CNRS 8520
Vladimir UlinIoffe Institute
Vladimir BerkovitzIoffe Institute
Aristide LemaîtreCNRS UPR 20
Carmen GomezCNRS UPR 20
Alberto AmoCNRS UPR 20
Sylvian CombriéThales Research and Technology
Bruno GérardIII-V Lab
Giuseepe LeoUniversité Paris Diderot, CNRS UMR 7162
Ivan FaveroUniversité Paris Diderot, CNRS UMR 7162

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Optical Properties
Analysis: Optical Transmission
Diagnostic: -

Substrates

GaAs

Notes

786