Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

Type:
Journal
Info:
Applied Physics Letters 92, 231904 (2008)
Date:
2008-05-17
DOI:
http://dx.doi.org/10.1063/1.2940598

Author Information

Name Institution
E. LangereisEindhoven University of Technology
J. KeijmelEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 150C

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-150C

Film/Plasma Properties

Characteristic: Surface Hydroxyl Concentration
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Characteristic: Surface Reactions
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Substrates

KBr

Notes

1436