Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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On the equilibrium concentration of boron-oxygen defects in crystalline silicon

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 173, 2017, Pages 33 - 36
Date:
2017-06-19
DOI:
https://doi.org/10.1016/j.solmat.2017.06.036

Author Information

Name Institution
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
R. FalsterSunEdison Semiconductor
V. V. VoronkovSunEdison Semiconductor
J. SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

1109