Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range

Type:
Journal
Info:
AIP ADVANCES 6, 095014 (2016)
Date:
2016-09-06
DOI:
http://dx.doi.org/10.1063/1.4963140

Author Information

Name Institution
Yunqiu WuUniversity of Electronic Science and Technology of China
Yun WuNanjing Electronic Device Institute
Kai KangUniversity of Electronic Science and Technology of China
Yuanfu ChenUniversity of Electronic Science and Technology of China
Yanrong LiUniversity of Electronic Science and Technology of China
Tangsheng ChenNanjing Electronic Device Institute
Yuehang XuUniversity of Electronic Science and Technology of China

Films

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Substrates

Graphene

Notes

849