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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
Type:
Journal
Info:
AIP ADVANCES 6, 095014 (2016)
Date:
2016-09-06
Author Information
| Name | Institution |
|---|---|
| Yunqiu Wu | University of Electronic Science and Technology of China |
| Yun Wu | Nanjing Electronic Device Institute |
| Kai Kang | University of Electronic Science and Technology of China |
| Yuanfu Chen | University of Electronic Science and Technology of China |
| Yanrong Li | University of Electronic Science and Technology of China |
| Tangsheng Chen | Nanjing Electronic Device Institute |
| Yuehang Xu | University of Electronic Science and Technology of China |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| 849 |