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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
Type:
Journal
Info:
AIP ADVANCES 6, 095014 (2016)
Date:
2016-09-06
Author Information
| Name | Institution |
|---|---|
| Yunqiu Wu | University of Electronic Science and Technology of China |
| Yun Wu | Nanjing Electronic Device Institute |
| Kai Kang | University of Electronic Science and Technology of China |
| Yuanfu Chen | University of Electronic Science and Technology of China |
| Yanrong Li | University of Electronic Science and Technology of China |
| Tangsheng Chen | Nanjing Electronic Device Institute |
| Yuehang Xu | University of Electronic Science and Technology of China |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| 849 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |