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Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
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Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
Type:
Journal
Info:
AIP ADVANCES 6, 095014 (2016)
Date:
2016-09-06
Author Information
| Name | Institution |
|---|---|
| Yunqiu Wu | University of Electronic Science and Technology of China |
| Yun Wu | Nanjing Electronic Device Institute |
| Kai Kang | University of Electronic Science and Technology of China |
| Yuanfu Chen | University of Electronic Science and Technology of China |
| Yanrong Li | University of Electronic Science and Technology of China |
| Tangsheng Chen | Nanjing Electronic Device Institute |
| Yuehang Xu | University of Electronic Science and Technology of China |
Films
Plasma Al2O3
Film/Plasma Properties
Substrates
| Graphene |
Keywords
Notes
| 849 |