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MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
Type:
Journal
Info:
Nanomaterials 2020, 10, 338
Date:
2020-02-13
Author Information
| Name | Institution |
|---|---|
| William Chiappim | Universidade de Aveiro, Campus Universitário de Santiago |
| Marcos Watanabe | University of Sao Paulo |
| Vanessa Dias | Instituto Tecnológico de Aeronáutica (ITA-DCTA) |
| Giorgio E. Testoni | Instituto Tecnológico de Aeronáutica (ITA-DCTA) |
| Ricardo Rangel | University of Sao Paulo |
| Mariana A. Fraga | Instituto de Ciência e Tecnologia |
| Homero S. Maciel | Instituto Tecnológico de Aeronáutica (ITA-DCTA) |
| Sebastião dos Santos Filho | University of Sao Paulo |
| Rodrigo S. Pessoa | Instituto Tecnológico de Aeronáutica (ITA-DCTA) |
Films
Plasma TiO2
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Microstructure
Analysis: Raman Spectroscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1452 |