Publication Information

Title:
MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
Type:
Journal
Info:
Nanomaterials 2020, 10, 338
Date:
2020-02-13

Author Information

Name Institution
William ChiappimUniversidade de Aveiro, Campus Universitário de Santiago
Marcos WatanabeUniversity of Sao Paulo
Vanessa DiasInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Giorgio E. TestoniInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Ricardo RangelUniversity of Sao Paulo
Mariana A. FragaInstituto de Ciência e Tecnologia
Homero S. MacielInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Sebastião dos Santos FilhoUniversity of Sao Paulo
Rodrigo S. PessoaInstituto Tecnológico de Aeronáutica (ITA-DCTA)

Films

Plasma TiO2


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Microstructure
Analysis: Raman Spectroscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Nanolaminate
Direct vs Remote Plasma Comparison

Notes

1452