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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition Ni₈₀Fe₂₀ nanotubes with optimized spintronic functionalities prepared by atomic layer deposition On the Contact Optimization of ALD-Based MoS₂ FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Search 1609 plasma ALD publications by:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films

Type:

Journal

Info:

PHYSICAL REVIEW B 90, 035208 (2014)

Date:

2014-07-01

DOI:

http://dx.doi.org/10.1103/PhysRevB.90.035208

Author Information

Name	Institution
Wee Kiang Chong	Nanyang Technological University

Films

Plasma Al₂O₃

Hardware used: Picosun R200

TMA, trimethyl aluminum, AlMe₃

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Keywords

Notes

205

The publication database currently has 1609 entries.

Search from:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

86 Theses