Title: Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
Type: Journal
Info: physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date: 2013-09-25
DOI: http://dx.doi.org/10.1002/pssc.201300273
Name
Institution
Nara Institute of Science and Technology
Nara Institute of Science and Technology
Nara Institute of Science and Technology
Nara Institute of Science and Technology
75-24-1
Characteristic
Analysis
Diagnostic
Leakage Current
I-V, Current-Voltage Measurements
Unknown
Breakdown Voltage
I-V, Current-Voltage Measurements
Unknown
Band Gap
XPS, X-ray Photoelectron Spectroscopy
Unknown
GaN
604
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