Publication Information

Title:
Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
Type:
Journal
Info:
physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date:
2013-09-25

Author Information

Name Institution
Koji YoshitsuguNara Institute of Science and Technology
Masahiro HoritaNara Institute of Science and Technology
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaN

Keywords

Notes

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