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Publication Information

Title: Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Type: Journal

Info: physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013

Date: 2013-09-25

DOI: http://dx.doi.org/10.1002/pssc.201300273

Author Information

Name

Institution

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Nara Institute of Science and Technology

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Band Gap

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

GaN

Keywords

Notes

604



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