Title: Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
Type: Journal
Info: physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date: 2013-09-25
DOI: http://dx.doi.org/10.1002/pssc.201300273
Name
Institution
Nara Institute of Science and Technology
Nara Institute of Science and Technology
Nara Institute of Science and Technology
Nara Institute of Science and Technology
Characteristic
Analysis
Diagnostic
Leakage Current
I-V, Current-Voltage Measurements
-
Breakdown Voltage
I-V, Current-Voltage Measurements
-
Band Gap
XPS, X-ray Photoelectron Spectroscopy
-
GaN
604
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