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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
Type:
Journal
Info:
physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date:
2013-09-25
Author Information
| Name | Institution |
|---|---|
| Koji Yoshitsugu | Nara Institute of Science and Technology |
| Masahiro Horita | Nara Institute of Science and Technology |
| Yasuaki Ishikawa | Nara Institute of Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Notes
| 604 |