Publication Information

Title: Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Type: Journal

Info: physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013

Date: 2013-09-25

DOI: http://dx.doi.org/10.1002/pssc.201300273

Author Information

Name

Institution

Koji Yoshitsugu

Nara Institute of Science and Technology

Masahiro Horita

Nara Institute of Science and Technology

Yasuaki Ishikawa

Nara Institute of Science and Technology

Yukiharu Uraoka

Nara Institute of Science and Technology

Films

Plasma Al2O3 using JSW-Afty AFTEX-600

Deposition Temperature = 300C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Band Gap

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

GaN

Keywords

Notes

604


Mark Sowa

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