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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
Type:
Journal
Info:
physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date:
2013-09-25
Author Information
| Name | Institution |
|---|---|
| Koji Yoshitsugu | Nara Institute of Science and Technology |
| Masahiro Horita | Nara Institute of Science and Technology |
| Yasuaki Ishikawa | Nara Institute of Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Keywords
Notes
| 604 |