Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Type:
Journal
Info:
physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date:
2013-09-25
DOI:
http://dx.doi.org/10.1002/pssc.201300273

Author Information

Name Institution
Koji YoshitsuguNara Institute of Science and Technology
Masahiro HoritaNara Institute of Science and Technology
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: JSW-Afty AFTEX-600
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Keywords

Notes

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