Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
Type:
Journal
Info:
Infrared Physics & Technology 87 (2017) 129-133
Date:
2017-10-22
Author Information
| Name | Institution |
|---|---|
| Alexander Voitsekhovskii | National Research Tomsk State University |
| Sergey Nesmelov | National Research Tomsk State University |
| Stanislav Dzyadukh | National Research Tomsk State University |
| V.S. Varavin | Russian Academy of Sciences |
| S.A. Dvoretskii | National Research Tomsk State University |
| N.N. Mikhailov | Russian Academy of Sciences |
| M.V. Yakushev | Russian Academy of Sciences |
| G.Yu. Sidorov | Russian Academy of Sciences |
Films
Film/Plasma Properties
Substrates
| HgCdTe |
Notes
| 1077 |