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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
Type:
Conference Proceedings
Info:
2015 European Materials Research Society Spring Meeting
Date:
2015-05-13
Author Information
| Name | Institution |
|---|---|
| Matthieu Pawlik | Université Lille 1 |
| F. Morini | University of Tours |
| C. Sion | Université Lille 1 |
| D. Aureau | Université de Versailles Saint-Quentin |
| Arnaud Etcheberry | Université de Versailles Saint-Quentin |
| E. Dubois | Université Lille 1 |
| Jean-Pierre Vilcot | Université Lille 1 |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Unknown
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Silicon |
Keywords
| Solar |
Notes
| 440 |