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Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation

Type:
Conference Proceedings
Info:
2015 European Materials Research Society Spring Meeting
Date:
2015-05-13
DOI:
https://www.researchgate.net/publication/277272764_Coupled_used_of_SKP_and_C-V_measurements_to_highlight_the_charge_distribution_and_behavior_in_the_SiSiO2Al2O3_stack_for_silicon_solar_cells_surface_passivation

Author Information

Name Institution
Matthieu PawlikUniversité Lille
F. MoriniUniversity of Tours
C. SionUniversité Lille
D. AureauUniversité de Versailles Saint-Quentin
Arnaud EtcheberryUniversité de Versailles Saint-Quentin
E. DuboisUniversité Lille
Jean-Pierre VilcotUniversité Lille

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Unknown
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: -

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

440