Publication Information

Title: Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET

Type: Journal

Info: ETRI Journal, Volume 38, Number 4, p. 675 - 684 (2016)

Date: 2016-04-05

DOI: http://dx.doi.org/10.4218/etrij.16.0015.0040

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Dongguk University

Kyungpook National University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Etch Rate

Plasma Etching

-

Transistor Characteristics

Transistor Characterization

-

Substrates

AlGaN

Keywords

Notes

Discussion of Al2O3 etch chemistries.

Study showned Al2O3 etch rate of about 5.5A/min for CF4 etching.

Cl-based etch is about 6nm/s.

784



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