Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET

Type:
Journal
Info:
ETRI Journal, Volume 38, Number 4, p. 675 - 684 (2016)
Date:
2016-04-05
DOI:
http://dx.doi.org/10.4218/etrij.16.0015.0040

Author Information

Name Institution
Ho-Kyun AhnElectronics and Telecommunication Research Institute, (ETRI)
Hae-Cheon KimElectronics and Telecommunication Research Institute, (ETRI)
Dong-Min KangElectronics and Telecommunication Research Institute, (ETRI)
Sung-Il KimElectronics and Telecommunication Research Institute, (ETRI)
Jong-Min LeeElectronics and Telecommunication Research Institute, (ETRI)
Sang-Heung LeeElectronics and Telecommunication Research Institute, (ETRI)
Byoung-Gue MinElectronics and Telecommunication Research Institute, (ETRI)
Hyoung-Sup YoonElectronics and Telecommunication Research Institute, (ETRI)
Daong-Young KimElectronics and Telecommunication Research Institute, (ETRI)
Jong-Won LimElectronics and Telecommunication Research Institute, (ETRI)
Yong-Hwan KwonElectronics and Telecommunication Research Institute, (ETRI)
Eun-Soo NamElectronics and Telecommunication Research Institute, (ETRI)
Hyoung-Moo ParkDongguk University
Jung-Hee LeeKyungpook National University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Etch Rate
Analysis: Plasma Etching
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

AlGaN

Notes

Discussion of Al2O3 etch chemistries.
Study showned Al2O3 etch rate of about 5.5A/min for CF4 etching.
Cl-based etch is about 6nm/s.
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