Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition

Type:
Journal
Info:
physica status solidi (a) Volume 210, Issue 2, pages 276--284, 2013
Date:
2012-10-05
DOI:
http://dx.doi.org/10.1002/pssa.201228671

Author Information

Name Institution
Jaesang LeeHanyang University
Seung Jae LeeHanyang University
Won Bae HanHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Woochool JangHanyang University
Chong Seung YoonHanyang University
Hyeongtag JeonHanyang University

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-350C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Substrates

Si(100)

Notes

639