Publication Information

Title: The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition

Type: Journal

Info: physica status solidi (a) Volume 207, Issue 8, pages 1845--1849, 2010

Date: 2009-12-01

DOI: http://dx.doi.org/10.1002/pssa.200925514

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Thermal ZnO using Unknown

Deposition Temperature = 100C

557-20-0

7732-18-5

Other ZnO using Unknown

Deposition Temperature = 100C

557-20-0

7732-18-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Carrier Concentration

Hall Measurements

-

Resistivity, Sheet Resistance

Hall Measurements

-

Transistor Characteristics

Transistor Characterization

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

732



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