Publication Information

Title: The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition

Type: Journal

Info: physica status solidi (a) Volume 207, Issue 8, pages 1845--1849, 2010

Date: 2009-12-01

DOI: http://dx.doi.org/10.1002/pssa.200925514

Author Information

Name

Institution

Seungjun Lee

Hanyang University

Seokhwan Bang

Hanyang University

Joohyun Park

Hanyang University

Soyeon Park

Hanyang University

Wooho Jeong

Hanyang University

Hyeongtag Jeon

Hanyang University

Films

Thermal ZnO using Unknown

Deposition Temperature = 100C

DEZ, DiEthyl Zinc, ZnEt2, Zn(C2H5)2

557-20-0

Where to buy precursor

H2O, Water

7732-18-5

Other ZnO using Unknown

Deposition Temperature = 100C

DEZ, DiEthyl Zinc, ZnEt2, Zn(C2H5)2

557-20-0

Where to buy precursor

H2O, Water

7732-18-5

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Carrier Concentration

Hall Measurements

-

Resistivity, Sheet Resistance

Hall Measurements

-

Transistor Characteristics

Transistor Characterization

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

732


Mark Sowa

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