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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
Type:
Journal
Info:
physica status solidi (a) Volume 207, Issue 8, pages 1845--1849, 2010
Date:
2009-12-01
Author Information
| Name | Institution |
|---|---|
| Seungjun Lee | Hanyang University |
| Seokhwan Bang | Hanyang University |
| Joohyun Park | Hanyang University |
| Soyeon Park | Hanyang University |
| Wooho Jeong | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| SiO2 |
Keywords
| Plasma vs Thermal Comparison |
Notes
| 732 |