The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition

Type:
Journal
Info:
physica status solidi (a) Volume 207, Issue 8, pages 1845--1849, 2010
Date:
2009-12-01
DOI:
http://dx.doi.org/10.1002/pssa.200925514

Author Information

Name Institution
Seungjun LeeHanyang University
Seokhwan BangHanyang University
Joohyun ParkHanyang University
Soyeon ParkHanyang University
Wooho JeongHanyang University
Hyeongtag JeonHanyang University

Films

Thermal ZnO

Hardware used: Unknown
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 100C

Other ZnO

Hardware used: Unknown
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Notes

732