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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
Type:
Journal
Info:
physica status solidi (a) Volume 207, Issue 8, pages 1845--1849, 2010
Date:
2009-12-01
Author Information
| Name | Institution |
|---|---|
| Seungjun Lee | Hanyang University |
| Seokhwan Bang | Hanyang University |
| Joohyun Park | Hanyang University |
| Soyeon Park | Hanyang University |
| Wooho Jeong | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| SiO2 |
Notes
| 732 |