Publication Information

Title: Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 52, No. 4, April 2008, pp. 1103-1108

Date: 2007-08-17

DOI: https://doi.org/10.3938/jkps.52.1103

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma HfO2 using Custom

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Interlayer

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1174



Shortcuts



© 2014-2019 plasma-ald.com