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Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 52, No. 4, April 2008, pp. 1103-1108
Date:
2007-08-17
Author Information
| Name | Institution |
|---|---|
| Seokhoon Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Hyungchul Kim | Hanyang University |
| Inhoe Kim | Hanyang University |
| Keunwoo Lee | Hanyang University |
| Wooho Jeong | Hanyang University |
| Taeyong Park | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1174 |