Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 52, No. 4, April 2008, pp. 1103-1108
Date:
2007-08-17

Author Information

Name Institution
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungchul KimHanyang University
Inhoe KimHanyang University
Keunwoo LeeHanyang University
Wooho JeongHanyang University
Taeyong ParkHanyang University
Hyeongtag JeonHanyang University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1174