Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 52, No. 4, pp. 1114-1119
Date:
2008-01-02

Author Information

Name Institution
Hyungseok HongHanyang University
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungchul KimHanyang University
Honggyu KimHanyang University
Wooho JeongHanyang University
Sunyeol JeonHanyang University
Seokhwan BangHanyang University
Seungjun LeeHanyang University
Hyeongtag JeonHanyang University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Hf

Keywords

Notes

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