Publication Information

Title: Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique

Type: Journal

Info: Japanese Journal of Applied Physics 47, 6196--6199 (2008)

Date: 2008-04-06

DOI: http://dx.doi.org/10.1143/jjap.47.6196

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Toyohashi University of Technology

Toyohashi University of Technology

Toyohashi University of Technology

Films

Plasma HfO2 using Unknown

Deposition Temperature Range N/A

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Transistor Characteristics

Transistor Characterization

HP 4156A

Substrates

Silicon

SiO2

SiOxNy

Keywords

Notes

1334



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