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Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
Type:
Journal
Info:
Japanese Journal of Applied Physics 47, 6196--6199 (2008)
Date:
2008-04-06
Author Information
| Name | Institution |
|---|---|
| Sanghyun Woo | Hanyang University |
| Hyungseok Hong | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Hyungchul Kim | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Choelhwyi Bae | Hanyang University |
| Takayuki Okada | Toyohashi University of Technology |
| Tomomi Sawada | Toyohashi University of Technology |
| Makoto Ishida | Toyohashi University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
| SiO2 |
| SiOxNy |
Notes
| 1334 |