Publication Information

Title:
Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
Type:
Journal
Info:
Japanese Journal of Applied Physics 47, 6196--6199 (2008)
Date:
2008-04-06

Author Information

Name Institution
Sanghyun WooHanyang University
Hyungseok HongHanyang University
Seokhoon KimHanyang University
Hyungchul KimHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeHanyang University
Takayuki OkadaToyohashi University of Technology
Tomomi SawadaToyohashi University of Technology
Makoto IshidaToyohashi University of Technology

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Silicon
SiO2
SiOxNy

Keywords

Notes

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