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Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 24, 900-907 (2006)
Date:
2006-03-30
Author Information
| Name | Institution |
|---|---|
| Jihoon Choi | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Hyunseok Kang | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Choelhwyi Bae | North Carolina State University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Electron Density, ne
Analysis: Cut-off Method
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| SiO2 |
| SiOxNy |
Notes
| 1302 |