Publication Information

Title: Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 9 (2) G40-G43 (2006)

Date: 2005-09-23

DOI: http://dx.doi.org/10.1149/1.2149210

Author Information

Name

Institution

Hanyang University

Samsung Electronics Co.

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Hanyang University

Films

Plasma HfO2 using Custom ICP

Deposition Temperature = 300C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Electron Density, ne

Cut-off Method

Custom

Plasma Species

OES, Optical Emission Spectroscopy

-

Ion Density

Langmuir Probe

Custom

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

-

Trapped Positive Charge-Density Change

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Silicon

Keywords

Notes

1317



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