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Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (3) F13-F15 (2006)
Date:
2005-11-07
DOI:
http://dx.doi.org/10.1149/1.2163447

Author Information

Name Institution
Jihoon ChoiHanyang University
Seokhoon KimHanyang University
Hyunseok KangHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeNorth Carolina State University

Films

Plasma HfO2

Hardware used: Unknown
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)
SiO2
SiOxNy

Notes

1303