Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Type:
Journal
Info:
Applied Physics Letters 87, 262901 (2005)
Date:
2005-11-17
DOI:
http://dx.doi.org/10.1063/1.2150250

Author Information

Name Institution
Youngdo WonHanyang University
Sangwook ParkHanyang University
Jaehyoung KooHanyang University
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Unknown
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Surface Reactions
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

1255