Publication Information

Title: Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Type: Journal

Info: Applied Physics Letters 87, 262901 (2005)

Date: 2005-11-17

DOI: http://dx.doi.org/10.1063/1.2150250

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma HfO2 using Unknown

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Surface Reactions

XPS, X-ray Photoelectron Spectroscopy

-

Thickness

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

-

Microstructure

TEM, Transmission Electron Microscope

-

Substrates

Si(100)

Keywords

Reaction Mechanism

Notes

1255



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