Publication Information

Title: Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics

Type: Journal

Info: Electrochemical and Solid-State Letters, 9 (6) G211-G214 (2006)

Date: 2006-02-06

DOI: http://dx.doi.org/10.1149/1.2192647

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO2 using Unknown

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Charge Density

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

Si(100)

SiO2

Keywords

Notes

1304



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