Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G211-G214 (2006)
Date:
2006-02-06
DOI:
http://dx.doi.org/10.1149/1.2192647

Author Information

Name Institution
Hyunseok KangHanyang University
Seokhoon KimHanyang University
Jihoon ChoiHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeSamsung Electronics Co.

Films

Plasma HfO2

Hardware used: Unknown
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Substrates

Si(100)
SiO2

Notes

1304