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Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G211-G214 (2006)
Date:
2006-02-06
Author Information
| Name | Institution |
|---|---|
| Hyunseok Kang | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Jihoon Choi | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Choelhwyi Bae | Samsung Electronics Co. |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
| SiO2 |
Notes
| 1304 |