Publication Information

Title: Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

Type: Journal

Info: ECS Transactions, 1 (5) 459-464 (2006)

Date: 2005-10-18

DOI: http://dx.doi.org/10.1149/1.2209296

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO2 using Custom

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

SiO2

Keywords

Notes

1222



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