Publication Information

Title:
Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
Type:
Journal
Info:
ECS Transactions, 1 (5) 459-464 (2006)
Date:
2005-10-18

Author Information

Name Institution
Hyunseok KangHanyang University
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Jihoon ChoiHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeSamsung Electronics Co.

Films


Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)
SiO2

Keywords

Notes

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