Publication Information

Title: Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

Type: Journal

Info: ECS Transactions, 1 (5) 459-464 (2006)

Date: 2005-10-18

DOI: http://dx.doi.org/10.1149/1.2209296

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO2 using Custom

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Interfacial Layer

TEM, Transmission Electron Microscope

-

Thickness

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

-

Substrates

Si(100)

SiO2

Keywords

Notes

1222



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