Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

Type:
Journal
Info:
Advanced Functional Materials, Volume 24, Issue 32, 2014, Pages 5086--5095
Date:
2014-05-26
DOI:
http://dx.doi.org/10.1002/adfm.201400064

Author Information

Name Institution
Jung Ho YoonSeoul National University
Seul Ji SongSeoul National University
Il-Hyuk YooSeoul National University
Jun Yeong SeokSeoul National University
Kyung Jean YoonSeoul National University
Dae Eun KwonSeoul National University
Tae Hyung ParkSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma Ta2O5

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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