Forming-free metal-oxide ReRAM by oxygen ion implantation process

Type:
Conference Proceedings
Info:
2016 IEEE International Electron Devices Meeting (IEDM)
Date:
2016-12-03
DOI:
http://dx.doi.org/10.1109/IEDM.2016.7838345

Author Information

Name Institution
Wonjoo KimPeter-Grünberg Institute
Alexander HardtdegenPeter-Grünberg Institute
C. RodenbücherPeter-Grünberg Institute
S. MenzelPeter-Grünberg Institute
Dirk J. WoutersRWTH Aachen University
Susanne Hoffmann-EifertPeter-Grünberg Institute
Dan BucaPeter-Grünberg Institute
R. WaserPeter-Grünberg Institute
Vikas RanaPeter-Grünberg Institute

Films

Plasma HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

1001