Publication Information

Title: PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2019, 11 (31), pp 28407-28422

Date: 2019-07-11

DOI: http://dx.doi.org/10.1021/acsami.9b07090

Author Information

Name

Institution

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Heinrich-Heine-University Düsseldorf

Ruhr-University Bochum

Films

Plasma HfO2 using Custom ECR

Deposition Temperature Range = 60-240C

0-0-0

7782-44-7

Deposition Temperature Range N/A

0-0-0

Deposition Temperature Range N/A

0-0-0

Deposition Temperature Range N/A

0-0-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments Nanoscope Multimode V

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

NRA, Nuclear Reaction Analysis

-

Stability

NAP-XPS, Near-Ambient-Pressure X-ray Photoelectron Spectroscopy

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4282A LCR Meter

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4156B

Microstructure

TEM, Transmission Electron Microscope

FEI Helios G4 CX

Precursor Characterization

NMR, Nuclear Magnetic Resonance

-

Precursor Characterization

TGA, Thermo Gravimetric Analysis

-

Substrates

Si(100)

Keywords

Notes

1354



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