Publication Information

Title:
PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2019, 11 (31), pp 28407-28422
Date:
2019-07-11

Author Information

Name Institution
David ZandersRuhr-University Bochum
Engin CiftyurekRuhr-University Bochum
Ersoy SubaşıRuhr-University Bochum
Niklas HusterRuhr-University Bochum
Claudia BockRuhr-University Bochum
Aleksander KostkaRuhr-University Bochum
Detlef RogallaRuhr-University Bochum
Klaus SchierbaumHeinrich-Heine-University Düsseldorf
Anjana DeviRuhr-University Bochum

Films

Plasma HfO2

Hardware used: Custom ECR


CAS#: 7782-44-7

Hardware used: Unknown




Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis

Characteristic: Stability
Analysis: NAP-XPS, Near-Ambient-Pressure X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Precursor Characterization
Analysis: NMR, Nuclear Magnetic Resonance

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Substrates

Si(100)

Keywords

Notes

1354