PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2019, 11 (31), pp 28407-28422
Date:
2019-07-11
DOI:
http://dx.doi.org/10.1021/acsami.9b07090

Author Information

Name Institution
David ZandersRuhr-University Bochum
Engin CiftyurekRuhr-University Bochum
Ersoy SubaşıRuhr-University Bochum
Niklas HusterRuhr-University Bochum
Claudia BockRuhr-University Bochum
Aleksander KostkaRuhr-University Bochum
Detlef RogallaRuhr-University Bochum
Klaus SchierbaumHeinrich-Heine-University Düsseldorf
Anjana DeviRuhr-University Bochum

Films

Plasma HfO2

Hardware used: Custom ECR
Hf{η2-(iPrN)2CNEtMe}(NEtMe)3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 60-240C

Thermal Precursor Characterization

Hardware used: Unknown
Hf{η2-(iPrN)2CNEt2}(NEt2)3
CAS#: 0-0-0
Deposition Temperature Range N/A

Thermal Precursor Characterization

Hardware used: Unknown
Hf{η2-((EtN)(tBuN))CNEtMe}(NEtMe)3
CAS#: 0-0-0
Deposition Temperature Range N/A

Thermal Precursor Characterization

Hardware used: Unknown
Hf{η2-((EtN)(tBuN))CNEt2}(NEt2)3
CAS#: 0-0-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope Multimode V

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Stability
Analysis: NAP-XPS, Near-Ambient-Pressure X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4282A LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4156B

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Helios G4 CX

Characteristic: Precursor Characterization
Analysis: NMR, Nuclear Magnetic Resonance
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Substrates

Si(100)

Notes

1354