Publication Information

Title:
Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 24, 2230-2235 (2006)
Date:
2006-07-10

Author Information

Name Institution
Diefeng GuArizona State University
Jing LiArizona State University
Sandwip K. DeyArizona State University
Henk De WaardASM Microchemistry Oy
Steven MarcusASM Microchemistry Oy

Films

Plasma Ta2O5


Thermal Ta2O5


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si with native oxide

Keywords

Plasma vs Thermal Comparison

Notes

Work possibly done on ASM system.
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