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Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 24, 2230-2235 (2006)
Date:
2006-07-10
Author Information
| Name | Institution |
|---|---|
| Diefeng Gu | Arizona State University |
| Jing Li | Arizona State University |
| Sandwip K. Dey | Arizona State University |
| Henk De Waard | ASM Microchemistry Oy |
| Steven Marcus | ASM Microchemistry Oy |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si with native oxide |
Notes
| Work possibly done on ASM system. |
| 1314 |