Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 3, pp. 999-1004
Date:
2008-08-26
DOI:
https://doi.org/10.3938/jkps.55.999

Author Information

Name Institution
Sung-Ku KwonKunsan National University
Dae-Woon KimKunsan National University
Yong-Ho JungNational Fusion Research Institute
Bong-Ju LeeNational Fusion Research Institute

Films

Plasma ZnO

Hardware used: Custom Remote Inductively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: MAC Scientific Co., M18XCE

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Inficon Transpector

Substrates

Si(100)
Quartz

Notes

ICP uses 27.12MHz
1344