Publication Information

Title: Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1048-1053

Date: 2008-06-16

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=F2AC8C97-6957-4BBE-BD9B-3EE9E6A5E4D0

Author Information

Name

Institution

Kunsan National University

IBM

Films

Plasma TiO2 using Custom ICP

Deposition Temperature Range = 175-400C

546-68-9

7782-44-7

Plasma TiO2 using Custom ICP

Deposition Temperature = 350C

546-68-9

7732-18-5

Thermal TiO2 using Custom ICP

Deposition Temperature Range = 200-350C

546-68-9

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

OES, Optical Emission Spectroscopy

-

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Uniformity

Ellipsometry

-

Substrates

Silicon

Keywords

Modeling

Plasma vs Thermal Comparison

Notes

Compared three different ICP sources on the same chamber.

Discusses sample heating from plasma.

711



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