Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1048-1053
Date:
2008-06-16
DOI:
http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=F2AC8C97-6957-4BBE-BD9B-3EE9E6A5E4D0

Author Information

Name Institution
Junghoon JooKunsan National University
S. M. RossnagelIBM

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 175-400C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 350C

Thermal TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 200-350C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: -

Substrates

Silicon

Notes

Compared three different ICP sources on the same chamber.
Discusses sample heating from plasma.
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