Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells
Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 245, 2022, Pages 111869
Date:
2022-06-26
Author Information
| Name | Institution |
|---|---|
| Bart Macco | Eindhoven University of Technology |
| Mike L. van de Poll | Eindhoven University of Technology |
| B. W. H. van de Loo | SoLayTec |
| Tim M.P. Broekema | Eindhoven University of Technology |
| Saravana Balaji Basuvalingam | Eindhoven University of Technology |
| Cristian Van Helvoirt | Eindhoven University of Technology |
| Wilhelmus J.H. Berghuis | Eindhoven University of Technology |
| Roel J. Theeuwes | Eindhoven University of Technology |
| Nga Phung | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Al:ZnO
Thermal Al:ZnO
Film/Plasma Properties
Characteristic: Passivation
Analysis: -
Characteristic: Open Circuit Voltage
Analysis: -
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Wet Etch Resistance
Analysis: Custom
Substrates
| Si with native oxide |
Notes
| 1741 |