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Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 245, 2022, Pages 111869
Date:
2022-06-26
DOI:
https://doi.org/10.1016/j.solmat.2022.111869

Author Information

Name Institution
Bart MaccoEindhoven University of Technology
Mike L. van de PollEindhoven University of Technology
B. W. H. van de LooSoLayTec
Tim M.P. BroekemaEindhoven University of Technology
Saravana Balaji BasuvalingamEindhoven University of Technology
Cristian Van HelvoirtEindhoven University of Technology
Wilhelmus J.H. BerghuisEindhoven University of Technology
Roel J. TheeuwesEindhoven University of Technology
Nga PhungEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al:ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Thermal Al:ZnO

Hardware used: Custom Spatial
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 230C

Film/Plasma Properties

Characteristic: Passivation
Analysis: -
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Open Circuit Voltage
Analysis: -
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Substrates

Si with native oxide

Notes

1741