About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 050904 (2019)
Date:
2019-08-09

Author Information

Name Institution
Jeroen KintGhent University
Felix MattelaerGhent University
Matthias M. MinjauwGhent University
Bo ZhaoGhent University
Christophe DetavernierGhent University

Films


Plasma Fe2O3



Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Electrochemical Performance
Analysis: Custom

Substrates

SiO2
Pt

Notes

1510