Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Solid-State Electronics 163 (2020) 107661
Date:
2019-09-18

Author Information

Name Institution
Yoonseo JangYonsei University
Seung Min LeeYonsei University
Do Hwan JungYonsei University
Jung Hwan YumUlsan National Institute of Science and Technology
Eric S. LarsenUlsan National Institute of Science and Technology
Christopher W. BielawskiUlsan National Institute of Science and Technology
Jungwoo OhYonsei University

Films

Plasma BeO


Thermal BeO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

Thermal deposition process guessed. Not given in text.
1559