Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Solid-State Electronics 163 (2020) 107661
Date:
2019-09-18
DOI:
https://doi.org/10.1016/j.sse.2019.107661

Author Information

Name Institution
Yoonseo JangYonsei University
Seung Min LeeYonsei University
Do Hwan JungYonsei University
Jung Hwan YumUlsan National Institute of Science and Technology
Eric S. LarsenUlsan National Institute of Science and Technology
Christopher W. BielawskiUlsan National Institute of Science and Technology
Jungwoo OhYonsei University

Films

Plasma BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 287C

Thermal BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 287C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

Thermal deposition process guessed. Not given in text.
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