Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 040901 (2019)
Date:
2019-05-23

Author Information

Name Institution
Fatemeh S. M. HashemiDelft University of Technology
LiAo CaoGhent University
Felix MattelaerGhent University
Timo SajavaaraUniversity of Jyväskylä
J. Ruud van OmmenDelft University of Technology
Christophe DetavernierGhent University

Films

Plasma Al2O3


Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Si(100)

Notes

1558