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Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 040901 (2019)
Date:
2019-05-23
Author Information
| Name | Institution |
|---|---|
| Fatemeh S. M. Hashemi | Delft University of Technology |
| LiAo Cao | Ghent University |
| Felix Mattelaer | Ghent University |
| Timo Sajavaara | University of Jyväskylä |
| J. Ruud van Ommen | Delft University of Technology |
| Christophe Detavernier | Ghent University |
Films
Plasma Al2O3
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Substrates
| Si(100) |
Notes
| 1558 |