Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment

Type:
Journal
Info:
Journal of Applied Physics 112, 124102 (2012)
Date:
2012-11-07
DOI:
http://dx.doi.org/10.1063/1.4768839

Author Information

Name Institution
Hsin-Wei HuangNational Tsing Hua University
Wen-Chih ChangNational Tsing Hua University
Su-Jien LinNational Tsing Hua University
Yu-Lun ChuehNational Tsing Hua University

Films

Thermal ZnO

Hardware used: Custom Remote Inductively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 100-250C

Plasma ZnO

Hardware used: Custom Remote Inductively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Optical Absorption
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

1471