Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (6) G127-G133 (2007)
Date:
2007-01-29
DOI:
http://dx.doi.org/10.1149/1.2720763

Author Information

Name Institution
Oh Seong KwonSeoul National University
Sang Woon LeeSeoul National University
Jeong Hwan HanSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma SrTiO3

Hardware used: Quros 100
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 190-270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: Spectrace QuanX

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer 660

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: CAMECA IMS 6F

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

Si with native oxide
Ru

Notes

1185