Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 572 (2022) 151405
Date:
2021-09-23
DOI:
https://doi.org/10.1016/j.apsusc.2021.151405

Author Information

Name Institution
Yoonseo JangYonsei University
Do Hwan JungYonsei University
Prakash R. SultaneInstitute for Basic Science
Eric S. LarsenInstitute for Basic Science
Christopher W. BielawskiInstitute for Basic Science
Jungwoo OhYonsei University

Films

Plasma BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-300C

Thermal BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL JEM ARM 200

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Substrates

Si(100)

Notes

1618